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Papers by Author: Gerhard Pensl

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Codoping of 4H-SiC with N- and P-Donors by Ion Implantation

Authors: Michael Laube, Frank Schmid, Gerhard Pensl, Günter Wagner

791

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC

Authors: Frank Schmid, Michael Laube, Gerhard Pensl, Günter Wagner, Manfred Maier

787

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Authors: B. Herzog, S. Rohmfeld, Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Gerhard Pensl

625

Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC

Authors: Wolfgang J. Choyke, Robert P. Devaty, Song Bai, Adam Gali, Peter Deák, Gerhard Pensl

585

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Authors: Atsuo Kawasuso, Michael Weidner, F. Redmann, Thomas Frank, Reinhard Krause-Rehberg, Gerhard Pensl, Peter Sperr, Werner Triftshäuser, Hisayoshi Itoh

489

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Authors: Günter Wagner, W. Leitenberger, K. Irmscher, Frank Schmid, Michael Laube, Gerhard Pensl

207

Low Temperature Photoluminescence Processes of ¹³C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method

Authors: Horst Sadowski, Norbert Schulze, Thomas Frank, Gerhard Pensl, Michael Laube, Reinhard Helbig

401

Channeling Measurements of Ion Implantation Damage in 4H-SiC

Authors: Andrej Yu. Kuznetsov, Martin S. Janson, Anders Hallén, Bengt Gunnar Svensson, C. Jagadish, H. Grünleitner, Gerhard Pensl

595

Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study

Authors: Atsuo Kawasuso, F. Redmann, Reinhard Krause-Rehberg, Peter Sperr, Thomas Frank, Michael Weidner, Gerhard Pensl, Hisayoshi Itoh

537

Authors: M. Krieger, Michael Laube, Michael Weidner, Gerhard Pensl

467