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Articles by author: H. Lendenmann

• A 2.8kV, Forward Drop JBS Diode with Low Leakage
  Published in: Silicon Carbide and Related Materials - 1999 (p1179)
• A High Performance JBS Rectifier - Design Considerations
  Published in: Silicon Carbide and Related Materials 2000 (p683)
• A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
  Published in: Silicon Carbide and Related Materials 2001 (p1129)
• Characterisation and Defects in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p9)
• Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2000 (p299)
• Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p901)
• High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
  Published in: Silicon Carbide and Related Materials 2001 (p1259)
• Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
  Published in: Silicon Carbide and Related Materials 2000 (p727)
• Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1281)
• Operation of a 2500V 150A Si-IGBT / SiC Diode Module
  Published in: Silicon Carbide and Related Materials - 1999 (p1423)
• Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p141)
• TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p359)