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Papers by Author: Henrik Jacobsson

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Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Authors: S.M. Bishop, Edward A. Preble, Christer Hallin, Anne Henry, L. Storasta, Henrik Jacobsson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén, Robert F. Davis

221

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Authors: Henrik Jacobsson, Peder Bergman, Christer Hallin, T.O. Tuomi, Erik Janzén

913

Authors: Henrik Jacobsson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositza Yakimova, Erik Janzén

269

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

Authors: P.O.Å. Persson, J.M. Molina-Aldareguia, Peder Bergman, Henrik Jacobsson, T.O. Tuomi, W.J. Clegg, Erik Janzén, L. Hultman

423

Behavior of Micropipes during Growth in 4H-SiC

Authors: N. Vouroutzis, Rositza Yakimova, Mikael Syväjärvi, Henrik Jacobsson, J. Stoemenos, Erik Janzén

395

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Authors: Rositza Yakimova, Henrik Jacobsson, Mikael Syväjärvi, A. Kakanakova-Georgieva, T. Iakimov, Charíya Virojanadara, Leif I. Johansson, Erik Janzén

283

Lateral Enlargement of Silicon Carbide Crystals

Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén

High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers

Authors: Henrik Jacobsson, Rositza Yakimova, Mikael Syväjärvi, Jens Birch, T.O. Tuomi, Erik Janzén

291

Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates

Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Erik Janzén

143

High Growth Rate Epitaxy of Thick 4H-SiC Layers

Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén

165