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Papers by Author: Hisayoshi Itoh

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Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation

Authors: Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Hisayoshi Itoh

559

Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation

Authors: Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl

477

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Authors: Kin Kiong Lee, Takeshi Ohshima, Hisayoshi Itoh

1097

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Authors: Takeshi Ohshima, Kin Kiong Lee, Akihiko Ohi, Masahito Yoshikawa, Hisayoshi Itoh

1093

SIMS Analyses of SiO₂/4H-SiC(0001) Interface

Authors: Kenya Yamashita, Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Masao Uchida, Ryouko Miyanaga, Hisayoshi Itoh, Masahito Yoshikawa

1037

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Authors: Masahito Yoshikawa, Mirei Satoh, Takeshi Ohshima, Hisayoshi Itoh

1009

Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

Authors: Akihiko Ohi, Takeshi Ohshima, Masahito Yoshikawa, Kin Kiong Lee, Motohiro Iwami, Hisayoshi Itoh

831

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

Authors: Norikazu Mizuochi, Junichi Isoya, Satoshi Yamasaki, H. Takizawa, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh

497

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Authors: Atsuo Kawasuso, Michael Weidner, F. Redmann, Thomas Frank, Reinhard Krause-Rehberg, Gerhard Pensl, Peter Sperr, Werner Triftshäuser, Hisayoshi Itoh

489

A System for Ultra-Fast Transient Ion and Pulsed Laser Current Microscopies as a Function of Temperature

Authors: Jamie Steward Laird, Toshio Hirao, S. Onoda, H. Mori, Hisayoshi Itoh

401