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Articles by author: Ian T. Ferguson

• An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1437)
• Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p693)
• Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs
  Published in: Shallow Impurities in Semiconductors IV (p381)
• Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb
  Published in: Defects in Semiconductors 16 (p1027)
• Material Properties of GaN Films Grown on SiC/SOI Substrate
  Published in: Silicon Carbide and Related Materials 2007 (p1313)
• Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique
  Published in: Silicon Carbide and Related Materials 2005 (p1567)
• Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1359)
• Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs
  Published in: Shallow Impurities in Semiconductors IV (p83)
• The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
  Published in: Silicon Carbide and Related Materials - 1999 (p157)
• Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1623)
• XRD and Optical Characterisation of GaN and Associated Substrate Materials
  Published in: European Powder Diffraction 6 (p1056)