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Papers by Author: John Österman

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SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers

Authors: Uwe Zimmermann, John Österman, Augustinas Galeckas, Anders Hallén

937

Simulations of High-Voltage 4H-SiC p⁺nn⁺ Diodes Using a Transient Model for the Deep Boron Level

Authors: Martin Domeij, Uwe Zimmermann, D. Åberg, John Österman, Anders Hallén, Mikael Östling

847

The Deep Boron Level in High-Voltage PiN Diodes

Authors: W. Stadler, Anders Hallén, John Österman, Uwe Zimmermann, Bengt Gunnar Svensson

1309

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Authors: Uwe Zimmermann, John Österman, Jie Zhang, Anne Henry, Anders Hallén

1285

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy

Authors: John Österman, Srinivasan Anand, Margareta K. Linnarsson, Anders Hallén

663

Techniques for Depth Profiling of Dopants in 4H-SiC

Authors: John Österman, Anders Hallén, Srinivasan Anand, Margareta K. Linnarsson, H. Andersson, Boleslaw Formanek, D. Panknin, Wolfgang Skorupa

559

Doping of Silicon Carbide by Ion Implantation

Authors: Bengt Gunnar Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan

549

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Authors: John Österman, Anders Hallén, Mikael Jargelius, Uwe Zimmermann, Augustinas Galeckas, Bo Breitholtz

777