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Articles by author: K. Schmalz

• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p91)
• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p1613)
• Characterization of MBE Grown Si/Si_1-xGe_x/Si Structures Using n⁺p-Diodes
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p595)
• Computer-Simulation of Gold-Redistribution in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p159)
• Creation of Deep Denuded Zones in CZ Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p135)
• Defect Engineering in a High-Voltage Substrate Technology
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p175)
• Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p409)
• Effect of Volume Defects on Gold Gettering in CZ-SI
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p41)
• Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon
  Published in: Defects in Semiconductors 17 (p809)
• Electrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in Silicon
  Published in: Defects in Semiconductors 16 (p239)
• Gettering of Au in Heat Treated Si/SiGe/Si Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p171)
• Impact of Volume Defects on Gold Gettering in Cz-Si Wafers
  Published in: Defects in Semiconductors 15 (p237)
• 'New Donors' in Heat-Treated Cz-Si - What is Really New There?
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p229)
• New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p259)
• New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C
  Published in: Defects in Semiconductors 15 (p667)