HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Kazuhiro Adachi

• Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
  Published in: Silicon Carbide and Related Materials 2000 (p719)
• Fabrication of 4H-SiC Double-Epitaxial MOSFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1421)
• Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
  Published in: Silicon Carbide and Related Materials 2001 (p1383)
• Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials 2003 (p1397)
• Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
  Published in: Silicon Carbide and Related Materials 2006 (p1035)
• Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
  Published in: Silicon Carbide and Related Materials 2001 (p1069)
• SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p887)
• Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p669)
• Super-Junction Device Forward Characteristics and Switched Power Limitations
  Published in: Silicon Carbide and Related Materials 2001 (p1251)
• TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
  Published in: Silicon Carbide and Related Materials - 1999 (p1419)
• TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
  Published in: Silicon Carbide and Related Materials 2001 (p1085)
• The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1233)