HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Kunikaza Izumi

• 4H-SiC Epitaxial Growth for High-Power Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p131)
• A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
  Published in: Silicon Carbide and Related Materials 2001 (p1137)
• Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1141)
• Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
  Published in: Silicon Carbide and Related Materials 2000 (p131)
• Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p261)
• Dependence of Micropipe Dissociation on Surface Orientation
  Published in: Silicon Carbide and Related Materials 2003 (p379)
• Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1297)
• Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2003 (p565)
• FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p351)
• Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
  Published in: Silicon Carbide and Related Materials 2003 (p229)
• Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2001 (p171)
• Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
  Published in: Silicon Carbide and Related Materials 2004 (p721)
• In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p709)
• Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p97)
• LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p145)