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Articles by author: M. Albrecht

• Cathodoluminescence Studies of Cu(In,Ga)Se₂ Thin-Films
  Published in: Polycrystalline Semiconductors VII (p133)
• Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p39)
• Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
  Published in: Polycrystalline Semiconductors III (p41)
• Growth Induced Stacking Fault Formation in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p21)
• Liquid Phase Epitaxy of SiGe Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p385)
• Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
  Published in: Beam Injection Assessment of Defects in Semiconductors (p139)
• Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p807)
• On the Nanostructure of Hydrogenated Silicon
  Published in: Polycrystalline Semiconductors IV (p167)
• Polycrystalline Silicon on Glass Substrates for Thin Film Solar Cells
  Published in: Polycrystalline Semiconductors IV (p515)
• Relaxation of Misfit Induced Strain in Si-Based Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p93)
• Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p403)
• Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p433)
• Structural Effects in Ultra-Thin Iridium Silicide
  Published in: Polycrystalline Semiconductors VI (p101)
• Structure and Optical Properties of Hydrogenated Silicon Films Prepared by Plasma Enhanced Chemical Vapour Deposition
  Published in: Polycrystalline Semiconductors IV (p249)