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Articles by author: Michael Laube

• A P-Channel MOSFET on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1401)
• Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Published in: Silicon Carbide and Related Materials 2001 (p207)
• Beryllium-Related Defect Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p467)
• Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2001 (p791)
• Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
  Published in: Silicon Carbide and Related Materials 2003 (p1381)
• Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p787)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2000 (p45)
• Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2006 (p791)
• Low Temperature Photoluminescence of ¹³C Enriched SiC-Crystals Grown by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 1999 (p623)
• Low Temperature Photoluminescence Processes of ¹³C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2000 (p401)
• Modeling of Boron Diffusion in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2000 (p327)
• Physics of SiC Processing
  Published in: Silicon Carbide and Related Materials - 1999 (p831)
• Transient-Enhanced Diffusion of Boron in SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p941)