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Papers by Author: Michael Weidner

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Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons

Authors: Michael Weidner, Lia Trapaidze, Gerhard Pensl, Sergey A. Reshanov, Adolf Schöner, Hisayoshi Itoh, Takeshi Ohshima, Tsunenobu Kimoto

Abstract: Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

439

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

Authors: Michael Weidner, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Takeshi Ohshima

485

Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation

Authors: Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl

477

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Authors: Atsuo Kawasuso, Michael Weidner, F. Redmann, Thomas Frank, Reinhard Krause-Rehberg, Gerhard Pensl, Peter Sperr, Werner Triftshäuser, Hisayoshi Itoh

489

Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study

Authors: Atsuo Kawasuso, F. Redmann, Reinhard Krause-Rehberg, Peter Sperr, Thomas Frank, Michael Weidner, Gerhard Pensl, Hisayoshi Itoh

537

Authors: M. Krieger, Michael Laube, Michael Weidner, Gerhard Pensl

467

Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC

Authors: Thomas Frank, Michael Weidner, Hisayoshi Itoh, Gerhard Pensl

439

Physics of SiC Processing

Authors: Gerhard Pensl, Valeri V. Afanas'ev, M. Bassler, Thomas Frank, Michael Laube, Michael Weidner

831

Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl

111

Critical Points of Strained Si_1-yC_y Layers on Si(001)

Authors: W. Kissinger, Michael Weidner, H.J. Osten, M. Eichler

523