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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Olivier Kim-Hak
12 papers on 1 page:
1
3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
Published in:
Silicon Carbide and Related Materials 2007
(p203)
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
Published in:
Silicon Carbide and Related Materials 2008
(p193)
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
Published in:
Silicon Carbide and Related Materials 2009
(p163)
Growth Kinetics of 3C-SiC on α-SiC by VLS
Published in:
Silicon Carbide and Related Materials 2007
(p199)
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
Published in:
Silicon Carbide and Related Materials 2007
(p195)
Growth of SiC from a Liquid Phase at Low Temperature
Published in:
Silicon Carbide and Related Materials 2006
(p41)
How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism
Published in:
Silicon Carbide and Related Materials 2006
(p187)
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
Published in:
Silicon Carbide and Related Materials 2009
(p67)
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2009
(p171)
On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2010
(p71)
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2008
(p185)
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
Published in:
Silicon Carbide and Related Materials 2009
(p383)
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