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Articles by author: P.O.Å. Persson

• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)
• Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p315)
• Growth of Epitaxial (SiC)_x(AlN)_1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p1481)
• Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1133)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p649)
• Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1519)
• Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p537)
• Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2000 (p583)
• SiC and III-Nitride Growth in Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p61)
• Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p423)
• Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p413)
• Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p275)