HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Peter Deák

• (10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p365)
• A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p535)
• A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si
  Published in: Silicon Carbide and Related Materials - 2002 (p523)
• Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p443)
• Boron Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p455)
• Calculation of Hyperfine Constants of Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p511)
• Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
  Published in: Defects in Semiconductors 15 (p329)
• Dissolution Mechanism of the Carbon Islands at the SiO₂/SiC Interface
  Published in: Silicon Carbide and Related Materials 2000 (p659)
• Dopant-related Complexes in SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p795)
• Electrical Activity of Isolated Oxygen Defects in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p463)
• Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
  Published in: Silicon Carbide and Related Materials 2001 (p585)
• Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
  Published in: Silicon Carbide and Related Materials 2001 (p561)
• Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
  Published in: Silicon Carbide and Related Materials 2000 (p435)
• Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
  Published in: Defects in Semiconductors 17 (p1481)
• Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
  Published in: Silicon Carbide and Related Materials 2004 (p457)