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Articles by author: Qamar-ul Wahab

• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
  Published in: Silicon Carbide and Related Materials 2000 (p699)
• A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p911)
• DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
  Published in: Silicon Carbide and Related Materials 2003 (p1225)
• Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
  Published in: Silicon Carbide and Related Materials - 1999 (p1171)
• Electrical Activation of B Implant in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p705)
• Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
  Published in: Silicon Carbide and Related Materials 2001 (p1395)
• Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1025)
• Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
  Published in: Silicon Carbide and Related Materials - 1999 (p131)
• Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p103)
• Growth of Device Quality 4H-SiC High Velocity Epitaxy
  Published in: Silicon Carbide and Related Materials 2003 (p201)
• High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p921)
• Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Published in: Silicon Carbide and Related Materials 2003 (p193)
• Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
  Published in: Silicon Carbide and Related Materials 2000 (p691)
• Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1175)