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Articles by author: Reinhard Kögler

• Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p399)
• Defect Engineering for SIMOX Processing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p339)
• Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p321)
• Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
  Published in: Silicon Carbide and Related Materials - 1999 (p309)
• Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p235)
• Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p587)
• Metal Gettering by Defective Regions in Carbon-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p63)
• Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
  Published in: Silicon Carbide and Related Materials 2000 (p591)
• The Influence of Helium and ODS on the Irradiation-Induced Hardening of Eurofer97 at 300°C
  Published in: 5th FORUM ON NEW MATERIALS PART B (p124)
• Trans-R_P Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p375)