Papers by Author: Rui Min Jin

Abstract: Based on TEOS system and sol-gel process, together with catalysts, Antireflective coating films prepared by sol—gel on glass substrate have been processed by furnace thermal annealing (FA). the refractive index and thinkness of SiO2 film is exactly controlled. The films are characterized by ellipsometer and SEM respectively. The effect of different temperatures in these processions are found and discussed

Abstract: Based on TEOS system and sol-gel process, together with catalysts, Antireflective coating films prepared by sol—gel on glass substrate have been processed by rapid thermal annealing (RTA). the refractive index and thinkness of SiO2 film is exactly controlled. The films are characterized by ellipsometer and SEM respectively. The quantum states in these processions are found and discussed.

Abstract: In this article, we have explained quantum state observed in fabricating poly-silicon the thin film and calculated the crystallization procession of rapid thermal annealing as a function of light energy. Equal energy driving principle was presented, it is shown that the change in magnetic frequency leads to the conversion of magnetic field energy to annealing energy.

Abstract: Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.

Abstract: Sol-gel thin films prepared by rotating coating technique, sol–gel derived bulk was prepared from constant water (H₂O)/tetraethyl-orthosilicate (TEOS) ratio, rotating coating was carried out at different rotating speed 1000r/min (high speed) and 800r/min (low speed), 1500r/min (high speed) and 800r/min (low speed),2000r/min (high speed) and 800r/min (low speed),2500r/min (high speed) and 800r/min (low speed) respectively. The films were characterized by ellipsometer and SEM respectively. The experimental results show the thickness and refractive index of films are become smaller and smaller with the rotating speeds increasing.

Abstract: Based on TEOS system and sol-gel process, together with catalysts, the microstructure of SiO2 particles in the sol is exactly controlled. The films are characterized by ellipsometer and SEM respectively. The experimental results show that adjusting catalytic time can effectively effect the uniformly porous structures of SiO2 thin film on the glass substrate.

Abstract: Based on TEOS system and sol-gel process, together with catalysts, the microstructure of SiO₂ particles in the sol is exactly controlled. The films are characterized by ellipsometer and SEM respectively. The experimental results show that adjusting catalytic agent can effectively effect the structure of SiO₂ thin film.

Abstract: This thesis is according to the pitching part of airborne radar servo system. The electromechanical coupling model and optimization model which includes structure parameters and control parameters are built up based on model of mechanism transmission system and electricity control system. The dynamics model of mechanism transmission system includes the nonlinearity of backlash and is considered the influence of parameters for dynamics properties in structure of the mechanism transmission system. The method of integrated structure and control design is applied on the optimization model using GA. Simulation is done based on MATLAB/SIMULINK. Simulation results show that the method of integrated structure and control design is feasible and effective in servo system.

Abstract: Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

Abstract: Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.