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Articles by author: Santo Martinuzzi

• About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells
  Published in: Polycrystalline Semiconductors III (p31)
• Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p585)
• Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p115)
• Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
  Published in: Beam Injection Assessment of Defects in Semiconductors (p53)
• Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe₂ Thin Films Prepared by Two Methods
  Published in: Polycrystalline Semiconductors III (p521)
• External Gettering around Extended Defects in Multicrystalline Silicon Wafers
  Published in: Polycrystalline Semiconductors III (p361)
• External Gettering for Multicrystalline Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p153)
• Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p297)
• Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p525)
• Impurity Concentration Mapping in Mulitcrystalline Silicon Wafers
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p3)
• Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers
  Published in: Defects in Semiconductors 17 (p1629)
• Interaction of Impurities and Dislocations in Silicon before and after External Gettering
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p103)
• Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
  Published in: Silicon Carbide and Related Materials 2003 (p509)
• Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
  Published in: Polycrystalline Semiconductors IV (p473)
• On the Interaction of Transition Metals with Silicon Grain Boundaries
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p105)