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Articles by author: Takashi Fuyuki

• Mechanisms in Electrochemical Etching of α-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p813)
• Modification of SiO₂/4H-SiC Interface Properties by High-Pressure H₂O Vapor Annealing
  Published in: Silicon Carbide and Related Materials 2006 (p663)
• Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
  Published in: Silicon Carbide and Related Materials 2006 (p283)
• Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
  Published in: Silicon Carbide and Related Materials 2003 (p1333)
• Reduction of Fluoride Species and Surface Roughness by H₂ Gas Addition in SiC Dry Etching
  Published in: Silicon Carbide and Related Materials 2004 (p757)
• Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching
  Published in: Silicon Carbide and Related Materials 2009 (p775)
• Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p739)
• Reliability of Low-Temperature Poly-Si Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VII (p43)
• Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience
  Published in: Silicon Carbide and Related Materials 2009 (p779)
• Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
  Published in: Silicon Carbide and Related Materials 2010 (p338)
• Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
  Published in: Silicon Carbide and Related Materials 2009 (p503)
• Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl₂-O₂ Thermal Etching
  Published in: Silicon Carbide and Related Materials 2006 (p733)
• Surface Structure of Electrochemically Etched α-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p717)
• Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
  Published in: Silicon Carbide and Related Materials 2010 (p374)
• Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p495)