Papers by Author: Tamotsu Jikimoto

Abstract: We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.

Abstract: First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been performed. Interface states due to Si-Si bonds appear at the valence band edge. Interface states at the midgap vanish when N atom terminates the Si dangling bond, but the interface states arising from the Si-N bonds appear at the valence band edge at the same time.