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Articles by author: Tamotsu Jikimoto

• 4H-SiC Epitaxial Growth for High-Power Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p131)
• A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
  Published in: Silicon Carbide and Related Materials 2001 (p1137)
• Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1141)
• Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
  Published in: Silicon Carbide and Related Materials 2000 (p131)
• Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p261)
• Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1297)
• Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2001 (p171)
• Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
  Published in: Silicon Carbide and Related Materials 2004 (p721)
• In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p709)
• Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
  Published in: Silicon Carbide and Related Materials 2003 (p1297)
• Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
  Published in: Silicon Carbide and Related Materials 2004 (p573)
• LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p145)
• Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
  Published in: Silicon Carbide and Related Materials 2000 (p311)
• Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation
  Published in: Defects and Diffusion in Ceramics (p111)
• The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1013)