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Articles by author: Tetsuo Takahashi

• 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
  Published in: Silicon Carbide and Related Materials 2001 (p275)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2001 (p323)
• Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
  Published in: Silicon Carbide and Related Materials - 1999 (p169)
• Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2000 (p135)
• CVD Growth Mechanism of 3C-SiC on Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p183)
• Development of a Practical High-Rate CVD System
  Published in: Silicon Carbide and Related Materials 2007 (p119)
• Effects of Addition of Alloying Elements on Superplastic Behavior in Mechanically Alloyed Aluminum Alloys
  Published in: Towards Innovation in Superplasticity I (p163)
• Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Published in: Silicon Carbide and Related Materials 2001 (p195)
• Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
  Published in: Silicon Carbide and Related Materials 2009 (p543)
• Formation of a CVI-SiC Matrix Coating Reinforced by Carbon Fiber on a 2-D Woven C/C Substrate
  Published in: High Temperature Ceramic Matrix Composites III (p163)
• High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2001 (p179)
• Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
  Published in: Silicon Carbide and Related Materials 2003 (p213)
• Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
  Published in: Silicon Carbide and Related Materials - 2002 (p925)
• Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1053)