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Articles by author: Tetsuo Takahashi

• Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1053)
• Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p215)
• Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2001 (p459)
• Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
  Published in: Silicon Carbide and Related Materials 2007 (p473)
• Photoluminescence Mapping of a SiC Wafer in Device Processing
  Published in: Silicon Carbide and Related Materials 2003 (p569)
• Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
  Published in: Silicon Carbide and Related Materials - 1999 (p1037)
• Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
  Published in: Silicon Carbide and Related Materials 2005 (p211)
• Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1405)
• Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2001 (p447)
• Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1235)
• Sensitive Detection of Defects in α and β SiC by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2001 (p629)
• Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2001 (p227)
• Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p207)
• The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
  Published in: Silicon Carbide and Related Materials - 1999 (p253)
• The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1013)