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Articles by author: Valeri F. Tsvetkov

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2007 (p931)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p429)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Large Diameter 4H-SiC Substrates for Commercial Power Applications
  Published in: Silicon Carbide and Related Materials 2003 (p41)
• Large Diameter, Low Defect Silicon Carbide Boule Growth
  Published in: Silicon Carbide and Related Materials 2000 (p3)
• SiC Seeded Boule Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p3)
• Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
  Published in: Silicon Carbide and Related Materials 2003 (p3)
• Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
  Published in: Silicon Carbide and Related Materials - 1999 (p3)
• Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p39)
• Vanadium-free Semi-insulating 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p21)