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Articles by author: Yi Chen

• Diffusion of Deuterons and Protons in α-Al₂O₃ Crystals Enhanced by an Electric Field
  Published in: Defects in Insulating Materials (p395)
• Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
  Published in: Silicon Carbide and Related Materials 2000 (p495)
• Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆
  Published in: Silicon Carbide and Related Materials - 1999 (p711)
• Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p255)
• Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p189)
• Hydriding Reactions Induced by Ball Milling
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials (p881)
• Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
  Published in: Silicon Carbide and Related Materials - 1999 (p257)
• Li Storage Properties of Carbon Nanotubes Prepared by Chemical Vapour Deposition
  Published in: Journal of Metastable and Nanocrystalline Materials: e-volume 2002 (p18)
• Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p197)
• Positronium Hydride Defects in Thermochemically Reduced Alkaline-Earth Oxides
  Published in: Defects in Insulating Materials (p47)
• Preparation of Porous 4H-SiC by Surface Anodization
  Published in: Silicon Carbide and Related Materials 2004 (p257)
• Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
  Published in: Silicon Carbide and Related Materials 2001 (p165)
• Semiconducting Characteristics of Lithium-Doped MgO Crystals
  Published in: Defects in Insulating Materials (p41)