Papers by Keyword: DLTS

Paper TitlePage

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

Authors: Martin Kittler, Winfried Seifert

197

A Deep Erbium-Related Bandgap State in 4H Silicon Carbide

Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn

487

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

Authors: Antonio Castaldini, Anna Cavallini, Filippo Nava, P.G. Fuochi, P. Vanni

439

Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC

Authors: L. Storasta, Björn Magnusson, Anne Henry, Margareta K. Linnarsson, Peder Bergman, Erik Janzén

423

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Authors: P. Lévêque, D.M. Martin, Bengt Gunnar Svensson, Anders Hallén

415

On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC

Authors: E. van Wyk, A.W.R. Leitch

383

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Authors: Marie-Laure David, Giovanni Alfieri, Edouard V. Monakhov, Anders Hallén, Jean François Barbot, Bengt Gunnar Svensson

371

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods

Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai, Yutaka Tokuda

Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy

Authors: P.K. Giri