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Articles by keyword: «Epilayer»

• Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
  Published in: Silicon Carbide and Related Materials 2000 (p537)
• Boron Compensation of 6H Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p119)
• Charge Collection Scanning Microscopy: Non-Conventional Applications
  Published in: Beam Injection Assessment of Defects in Semiconductors (p1)
• Chloride-Based SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p89)
• Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
  Published in: Silicon Carbide and Related Materials 2007 (p107)
• Isotropic and Anisotropic Elasticity Studies of Mismatch Dislocations, Critical Thickness and Work Hardening in Epilayers
  Published in: Defect and Diffusion Forum Vols. 136-137 (p61)
• Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
  Published in: Silicon Carbide and Related Materials 2008 (p291)
• Optical Characterization of MBE-Grown ZnO Epilayers
  Published in: Global Research and Education (p86)
• Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p197)
• Scanning Photoluminescence for Wafer Characterization
  Published in: Beam Injection Assessment of Defects in Semiconductors (p421)
• Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p525)
• Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
  Published in: Silicon Carbide and Related Materials - 2002 (p173)
• Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
  Published in: Silicon Carbide and Related Materials 2007 (p115)