Papers by Keyword: Hall-Effect

Abstract: Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.

Abstract: Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (MPVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 Ωcm for 6H-SiC and 0.2 Ωcm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 Ωcm, which are required for substrates in high power device applications, could be demonstrated for 4HSiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.

Abstract: The preparation and characterization of thick InP layers by Liquid Phase Epitaxy with admixture of Ce, Tb, Dy and Yb in the growth melt is reported. Measurement of temperature dependent Hall affect, C-V characteristics and low-temperature photoluminescence show the change of n®p type conductivity and considerable improvement of structural and electro-optical parameters for all studied rare-earth elements. Mn was identified as dominant acceptor impurity in the case of Tb and Dy addition. In the case of Ce and Yb the dominant acceptor was identified as isoelectronic Ce or Yb on the In site subjected to a strong electron-lattice interaction. The reported high quality thick p-type InP layers could well be used for the preparation of radiation detector structures.