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Articles by keyword: «Herojunction Bipolar Transistor (HBT)»

• Annealed Si_1-xC_x Emitter Silicon Heterojunction Bipolar Transistors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1455)
• Atomically Controlled Technology for Future Si-Based Devices
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p607)
• Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
  Published in: Advances in Nanomaterials and Processing (p97)
• Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology
  Published in: Mechanical and Aerospace Engineering (p5452)
• Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs
  Published in: Designing, Processing and Properties of Advanced Engineering Materials (p921)
• Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
  Published in: Silicon Carbide and Related Materials - 1999 (p1049)
• Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p1545)
• Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base
  Published in: Mechanical and Aerospace Engineering (p3311)
• Impact of Acceptor Concentration on Electronic Properties of n⁺-GaN/p⁺-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
  Published in: Silicon Carbide and Related Materials 2006 (p1039)
• Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p249)
• Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
  Published in: Silicon Carbide and Related Materials 2008 (p979)
• Influence of Emitter-Base Junction Displacement on the Band Structure in Heterojunction Bipolar Transistors
  Published in: Semiconductor Materials and Technology (p101)
• Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p177)
• Plasma Passivation of III-V Semiconductor Surfaces
  Published in: Hydrogen in Compound Semiconductors (p159)
• Sources of Hydrogen in III-V Device Processing
  Published in: Hydrogen in Compound Semiconductors (p141)