Keyword: "Interface States (or Traps)"
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SiC/SiO2 Interface States: Properties and Models

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans

563

4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

Authors: Saichirou Kaneko, Hideaki Tanaka, Yoshio Shimoida, Norihiko Kiritani, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi

1073

4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3

Authors: Svetlana Beljakowa, Thomas Frank, Gerhard Pensl, Kun Yuan Gao, Florian Speck, Thomas Seyller

627

4H-SiC MOSFETs on (03-38) Face

Authors: T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi

1065

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

Authors: Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

1417

A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC

Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón

535

A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces

Authors: H.Ö. Ólafsson, Christer Hallin, Einar Ö. Sveinbjörnsson

1305

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson

755

A Study of Organo-Metallic Interfaces Using DBAR

Authors: C.E. Tucker, F.A. Smith, Paul G. Coleman

457

A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

Authors: H.Ö. Ólafsson, Einar Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk

547

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