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Articles by keyword: «Interface States (or Traps)»

• SiC/SiO₂ Interface States: Properties and Models
  Published in: Silicon Carbide and Related Materials 2004 (p563)
• 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
  Published in: Silicon Carbide and Related Materials 2001 (p1073)
• 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃
  Published in: Silicon Carbide and Related Materials 2006 (p627)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
  Published in: Silicon Carbide and Related Materials 2003 (p1417)
• A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p535)
• A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
  Published in: Silicon Carbide and Related Materials 2003 (p1305)
• A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen
  Published in: Silicon Carbide and Related Materials 2007 (p755)
• A Study of Organo-Metallic Interfaces Using DBAR
  Published in: Positron Annihilation - ICPA-12 (p457)
• A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface
  Published in: Silicon Carbide and Related Materials - 2002 (p547)
• Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
  Published in: Silicon Carbide and Related Materials 2008 (p431)
• Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
  Published in: Silicon Carbide and Related Materials 2008 (p533)
• Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1069)
• As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p697)
• Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2005 (p1525)