| Paper Title | Page |
|---|---|
|
Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Authors: C. Sartel, Jean Marie Bluet, Veronique Soulière, I. El Harrouni, Yves Monteil, Michel Mermoux, Gérard Guillot |
165 |
|
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Authors: Thomas Frank, Gerhard Pensl, Song Bai, Robert P. Devaty, Wolfgang J. Choyke |
753 |
|
CVD of 6H-SiC on Non-Basal Quasi Polar Faces Authors: Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad ul Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow |
73 |
|
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr. |
35 |
|
Authors: Maya Marinova, Ariadne Andreadou, Jian Wu Sun, Jean Lorenzzi, Alkyoni Mantzari, Georgios Zoulis, Nikoletta Jegenyes, Sandrine Juillaguet, Veronique Soulière, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis |
241 |
|
Authors: Thierry Chassagne, André Leycuras, Carole Balloud, P. Arcade, Hervé Peyre, Sandrine Juillaguet |
273 |
|
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers Authors: Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa |
313 |
|
Authors: Georgios Zoulis, Jian Wu Sun, Irina G. Galben-Sandulache, Guoli L. Sun, Sandrine Juillaguet, Thierry Ouisse, Didier Chaussende, Roland Madar, Jean Camassel |
169 |
|
Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD) Authors: Hans Heissenstein, Horst Sadowski, Christian Peppermüller, Reinhard Helbig |
853 |