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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Minority Carrier Diffusion Length
»
10 papers on 1 page:
1
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
Published in:
Silicon Carbide and Related Materials 2005
(p423)
Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
Published in:
Beam Injection Assessment of Defects in Semiconductors
(p53)
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
Published in:
Beam Injection Assessment of Defects in Semiconductors
(p97)
Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
Published in:
Silicon Carbide and Related Materials 2006
(p347)
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH
3
SiH
3
and C
3
H
8
Sources
Published in:
Silicon Carbide and Related Materials 2005
(p203)
Impact of NiSi
2
Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p155)
Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping
Published in:
Polycrystalline Semiconductors III
(p189)
Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p205)
Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p807)
Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p323)
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