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Articles by keyword: «Minority Carrier Diffusion Length»

• 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
  Published in: Silicon Carbide and Related Materials 2005 (p423)
• Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
  Published in: Beam Injection Assessment of Defects in Semiconductors (p53)
• EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
  Published in: Beam Injection Assessment of Defects in Semiconductors (p97)
• Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
  Published in: Silicon Carbide and Related Materials 2006 (p347)
• High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources
  Published in: Silicon Carbide and Related Materials 2005 (p203)
• Impact of NiSi₂ Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p155)
• Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping
  Published in: Polycrystalline Semiconductors III (p189)
• Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p205)
• Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p807)
• Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p323)