Comparison Study on Microwave Absorbing Properties of SiC Absorbers

Gu Liu; Liu Ying Wang; Gui Ming Chen; Wan Ning Wei; Chao Qun Ge; Hu Zhang

doi:10.4028/www.scientific.net/AMM.117-119.1057

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 117-119Comparison Study on Microwave Absorbing Properties...

Comparison Study on Microwave Absorbing Properties of SiC Absorbers

Abstract:

In this paper, we have studied on the absorbing properties of three different types of SiC absorbers such as ultra-fine SiC, SiC whisker and nanometer SiC. Electromagnetic parameters of the three types of SiC were tested in the frequency range of 2~18GHz. Both the real and imaginary parts of complex permittivity of nanometer SiC are higher than that of others. The attenuation constant of nanometer SiC is higher than that of ultra-fine SiC and SiC whisker, increasing from 93.7 to 766.5 with increasing frequency. The minimum reflection loss of -5.53 dB was obtained at 9.72 GHz for the nanometer SiC. The nanometer SiC suggests a better capacity of dielectric loss in microwave range than that of ultra-fine SiC and SiC whisker.

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Periodical:

Applied Mechanics and Materials (Volumes 117-119)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.117-119.1057

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Online since:

October 2011

Authors:

Gu Liu, Liu Ying Wang, Gui Ming Chen, Wan Ning Wei, Chao Qun Ge, Hu Zhang

Keywords:

Electromagnetic Parameter, Microwave Absorption, Silicon Carbide (SiC)

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