Effect of bct-5 Si on the Indentation of Monocrystalline Silicon

Abstract:

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Mono-crystalline silicon experiences various phase transformations under different loading conditions. This paper reveals, with the aid of molecular dynamics simulations, that scratching the silicon {001} surface along the [110] direction under a load of 0.8 µN or more would produce stable 5 coordinated body centered tetragonal (bct-5) silicon in the subsurface. By examining the effect of this bct-5 silicon on indentation, it was found that the resistant to deformation of bct-5 silicon is higher than a-Si but lower than diamond Si.

Info:

Periodical:

Edited by:

Huixuan Zhang, Ye Han, Fuxiao Chen and Jiuba Wen

Pages:

666-669

DOI:

10.4028/www.scientific.net/AMM.117-119.666

Citation:

K. Mylvaganam and L. C. Zhang, "Effect of bct-5 Si on the Indentation of Monocrystalline Silicon", Applied Mechanics and Materials, Vols. 117-119, pp. 666-669, 2012

Online since:

October 2011

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$35.00

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