Effect of bct-5 Si on the Indentation of Monocrystalline Silicon

Abstract:

Mono-crystalline silicon experiences various phase transformations under different loading conditions. This paper reveals, with the aid of molecular dynamics simulations, that scratching the silicon {001} surface along the [110] direction under a load of 0.8 µN or more would produce stable 5 coordinated body centered tetragonal (bct-5) silicon in the subsurface. By examining the effect of this bct-5 silicon on indentation, it was found that the resistant to deformation of bct-5 silicon is higher than a-Si but lower than diamond Si.

• Periodical: Applied Mechanics and Materials (Volumes 117-119)
• Pages: 666-669
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.117-119.666
• Online since: October 2011
• Authors: Kausala Mylvaganam, Liang Chi Zhang
• Keywords: Bct-5 Silicon, Indentation, Molecular Dynamic (MD), Scratching, Silicon

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