Simulative Analysis of Carry Out Fontusing near Field Photolithography

Abstract:

Adopting the concepts of integration and cumulative sum of exposure energy in the intersecting region between two fabricated line segments, an analytical method of exposure energy density equation for near field photolithography of font fabrication is established. At the same time, cutting photoresist into limited nodes, together with the use of the integral equation of exposure energy density and Mack’s developing model, the full-width at half maximum (FWHM) and fabrication profile of font can be calculated. As analyzed in the study, in the intersecting region between two fabricated line segments, the greater the exposure energy, the deeper the fabrication depth; while in the straight-line region of fabricated lines, as the exposure energy is equal, all the fabrication depths are the same. The research analysis of the paper can be a reference for near field photolithography of font.

• Periodical: Applied Mechanics and Materials (Volume 120)
• Pages: 418-425
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.120.418
• Online since: October 2011
• Authors: Ching Been Yang, Hsiu Lu Chiang, Chein Chung Chen
• Keywords: Exposure Energy Density, Full-Width at Half Maximum, Near Field Photolithography

References

[1] E. Betzig, A. Harootunian, A. Lewis and M. Isaacson: Appl. Opt. Vol.25 (1986), p.1890.

[2] E. Betzig, M. Isaacson and A. Lewis: Appl. Phys. Lett. Vol. 51 (1987), p.2088.

[3] Y. Leviatan: J. Appl. Phys. Vol. 60 (1986)p.1577.

[4] E. Betzig, S. G. Grubb, R.J. Chichester, D.J. Diovanni and J.S. Weiner: Appl. Phys. Lett. Vol. 63(1993), p.3550.

[5] Z.C. Lin and C.B. Yang: Int. J. Adv.Manufact. Tech. Vol.26 (2005), p.1289.

[6] C.A. Balanis: Advanced Engineering Electromagnetics(John Wiley & Sons, Inc. New York, 1989).

[7] S. Wegscheider, A. Kirsch, J. Mlynek and G. Krausch:Thin Solid Films, Vol.264, (1995), p.264.

DOI: 10.1016/0040-6090(95)05818-4

[8] A. Naber, H. Kock and H. Fuchs: Scanning, Vol. 18, (1996), p.567.

[9] Y.Lin M.H. Hong, W.J. Wang, Y. Z.Lawand T.C. Chong: Appl. Phys. A, Vol.80, (2005)p.461.

[10] Y.Lin, M.H. Hong, W.J. Wang, Z.B. Wang, G.X. Chen,Q.Xie, L.S. Tanand T.C. Chong: Sensors and Actuators A, Vol.133, ( 2007), p.311.

[11] F.H. Dill, W.P. Hornberger, P.S. Hauge and J.M. Shaw: IEEE Trans. Electr. Dev. Vol. ED-22, (1975), p.445.

[12] S.V. Babu and E. Barouch: IEEE Electr. Dev. Lrtters, Vol. EDL-7, (1986), p.252.

[13] C.A. Mack: J. Electronchem. Soc. Solid-State Sci.& Tech. Vol.134, (1987), p.148.

[14] Z.C. Lin and C.B. Yang:J. Scanning Microscopies, Vol.28, (2006), p.32.

[15] Z.C. Lin and C.B. Yang: Proc. IMechE, Part B: J. Eng. Manuf. Vol. 223, (2009), p.145.

[16] William T. Silfvast:Laser Fundamentals (Cambridge University Press, New York1996).

[17] C.B. Yang: J. Comp. & Theo.Nanosci.accepted (2010).