The Effect of Oxide Fixed Charge on the Breakdown Characteristics of SiC Lateral Super Junction Devices

Abstract:

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In this paper, the positive and negative effects of oxide fixed charge on the breakdown characteristic of lateral SiC super junction devices are studied. Simulation results show that in the super junction devices with oxide layer, the negative (or positive) fixed charge on the SiO2/SiC interface act as a like p-pillar (or n-pillar) and enhance the depletion of n-pillar (or p-pillar), which result in a charge compensation and improvement of the breakdown characteristics of the devices. At the same time, a phenomenon of electric field crowding can be caused by the fixed charge and result in a decreasing of the breakdown voltage, this negative effect can be suppressed sufficiently by a field plate.

Info:

Periodical:

Edited by:

Dongye Sun, Wen-Pei Sung and Ran Chen

Pages:

1585-1589

DOI:

10.4028/www.scientific.net/AMM.121-126.1585

Citation:

H. J. Jia et al., "The Effect of Oxide Fixed Charge on the Breakdown Characteristics of SiC Lateral Super Junction Devices", Applied Mechanics and Materials, Vols. 121-126, pp. 1585-1589, 2012

Online since:

October 2011

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$35.00

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