Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film
ZnO has recently attracted considerable attention due to its favorable properties such as the wider band gap (3.37eV) at room temperature, the large binding energy of excitons (60meV). These good photoelectric and piezoelectric properties [1-4] cause it has immensity space for developing at surface acoustic wave devices, light emitting diodes (LEDs)  , photodetectors , gas sensor and solar cells  etc. MgZnO has many similar properties to ZnO. Furthermore, the band gap of MgZnO is 3.3-4.0eV  due to the wider band gap of MgO (7.7eV ). In this paper, we report the characteristic of MgxZn1-xO films which were grown on c-plane sapphire with different thickness-ZnO buffer layers by MOCVD. By investigating the surface morphology, structural and optical properties, some dependences between properties of MgZnO films and the thicknesses of ZnO buffer layers can be found.
X. Dong et al., "Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film", Applied Mechanics and Materials, Vols. 130-134, pp. 1192-1195, 2012