Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film

Abstract:

ZnO has recently attracted considerable attention due to its favorable properties such as the wider band gap (3.37eV) at room temperature, the large binding energy of excitons (60meV). These good photoelectric and piezoelectric properties [1-4] cause it has immensity space for developing at surface acoustic wave devices, light emitting diodes (LEDs) [5] , photodetectors [6], gas sensor and solar cells [7] etc. MgZnO has many similar properties to ZnO. Furthermore, the band gap of MgZnO is 3.3-4.0eV [9] due to the wider band gap of MgO (7.7eV [8]). In this paper, we report the characteristic of Mg_xZn_1-xO films which were grown on c-plane sapphire with different thickness-ZnO buffer layers by MOCVD. By investigating the surface morphology, structural and optical properties, some dependences between properties of MgZnO films and the thicknesses of ZnO buffer layers can be found.

• Periodical: Applied Mechanics and Materials (Volumes 130-134)
• Pages: 1192-1195
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.130-134.1192
• Online since: October 2011
• Authors: Xin Dong, H. Wang, J. Wang, Z.F. Shi, S.K. Zhang
• Keywords: AFM, MgZnO, MOCVD, ZnO Buffer Layer

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