213 W 500 Mhz 4H-SiC Static Induction Transistor

Gang Chen; Peng Wu; Song Bai; Zhe Yang Li; Yun Li; Wei Jiang Ni; Yu Zhu Li

doi:10.4028/www.scientific.net/AMM.130-134.3392

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 130-134213 W 500 Mhz 4H-SiC Static Induction Transistor

213 W 500 Mhz 4H-SiC Static Induction Transistor

Abstract:

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

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Periodical:

Applied Mechanics and Materials (Volumes 130-134)

Pages:

3392-3395

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.130-134.3392

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Online since:

October 2011

Authors:

Gang Chen, Peng Wu, Song Bai, Zhe Yang Li, Yun Li, Wei Jiang Ni, Yu Zhu Li

Keywords:

Micro-Wave, RF, Silicon Carbide (SiC), SIT

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