Paper Title:
213 W 500 Mhz 4H-SiC Static Induction Transistor
  Abstract

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

  Info
Periodical
Edited by
Han Zhao
Pages
3392-3395
DOI
10.4028/www.scientific.net/AMM.130-134.3392
Citation
G. Chen, P. Wu, S. Bai, Z. Y. Li, Y. Li, W. J. Ni, Y. Z. Li, "213 W 500 Mhz 4H-SiC Static Induction Transistor", Applied Mechanics and Materials, Vols. 130-134, pp. 3392-3395, 2012
Online since
October 2011
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