Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

Hung Yu Chiu; Yean Kuen Fang; Feng Renn Juang

doi:10.4028/www.scientific.net/AMM.284-287.98

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 284-287Effects of Carbon Co-Implantation on Transient...

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

Abstract:

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

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Periodical:

Applied Mechanics and Materials (Volumes 284-287)

Pages:

98-102

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.284-287.98

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Online since:

January 2013

Authors:

Hung Yu Chiu, Yean Kuen Fang, Feng Renn Juang

Keywords:

Carbon Co-Implantation, CMOS, Nano, TED, USJ

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