Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique

Abstract:

We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from a tradition NDR device made by a resonant tunneling diode with a quantum-well structure, we can utilize the nanobased BiCMOS process to implement these circuits by further improving the parameters.

• Periodical: Applied Mechanics and Materials (Volume 328)
• Pages: 669-673
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.328.669
• Online since: June 2013
• Authors: Kwang Jow Gan, Zheng Jie Jiang, Cher Shiung Tsai, Din Yuen Chan, Jian Syong Huang, Zhen Kai Kao, Wen Kuan Yeh
• Keywords: BiCMOS Technique, Dynamic Frequency Divider, Nanobased Process, Negative-Differential-Resistance, Oscillator

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