A Full Integrated LNA in 0.18μm SiGe BiCMOS Technology

Abstract:

A fully integrated low noise amplifier (LNA) for wireless local area network (WLAN) application is presents. The circuit is fabricated in 0.18μm SiGe BiCMOS technology. For the low noise figure, a feedback path is introduced into the traditional inductively degenerated common emitter cascade LNA, which decreases the inductance for input impedance matching, therefore reduces the thermal noise caused by loss resistor. Impedance matching and noise matching are achieved at the same time. Measured results show that the resonance point of the output resonance network shifts from 2.4GHz to 2.8GHz, due to the parasitic effects at the output. At the frequency of 2.8GHz, the LNA achieves 2.2dB noise figure, 19.4dB power gain. The core circuit consumes only 13mW from a 1.8V supply and occupies less than 0.5mm².

• Periodical: Applied Mechanics and Materials (Volumes 380-384)
• Pages: 3287-3291
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.380-384.3287
• Online since: August 2013
• Authors: Bing Liang Yu, Xiao Ning Xie, Wen Yuan Li
• Keywords: Impedance Matching, Low Noise Amplifier (LNA), SiGe BiCMOS, Wireless Local Area Network (WLAN)

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