Comparisons between Ku-Band GaAs SSPA and GaN SSPA with a Same Architecture

Hai Feng Cheng

doi:10.4028/www.scientific.net/AMM.385-386.1264

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 385-386Comparisons between Ku-Band GaAs SSPA and GaN SSPA...

Comparisons between Ku-Band GaAs SSPA and GaN SSPA with a Same Architecture

Abstract:

In this paper, two ku band SSPAs using GaAs and GaN MMICs respectively were developed. Both of all have a same 8-way combining architecture and a same packaging module. The two SSPAs were measured on a same pulse width and duty cycle with different drain voltages. Compared with the GaAs SSPA, the GaN SSPA is more compact and efficient.

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Periodical:

Applied Mechanics and Materials (Volumes 385-386)

Pages:

1264-1267

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.385-386.1264

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Online since:

August 2013

Authors:

Hai Feng Cheng

Keywords:

Gallium Arsenide, Gallium Nitride (GaN), Ku Band, Solid-State Power Amplifier

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References

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