Effect of TiO₂ Seed Layer Thickness to the Growth of TiO₂ Nanostructures by Immersion Method for Memristive Device Application

Abstract:

TiO₂ nanostructures were successfully grown on TiO₂ thin film by solution-based method at low temperature. TiO₂ thin film as a seed layer for the nanostructures growth was deposited on ITO substrate by RF magnetron sputtering method at 40 and 60 nm thicknesses. Then the TiO₂ nanostructures were synthesized on the samples by keeping them floating with TiO₂ layer facing down the vessel in 10M NaOH solution at 80°C for 45 min. Effect of seed layer thickness to the growth of TiO₂ nanostructure and its memristive behaviour were investigated. Surface morphology and current-voltage measurement for its memristive behaviour were measured by FESEM image and Keithley 4200 semiconductor characterization system. It was found that 60 nm-TiO₂ thin film result in the formation of dandelion-like morphology of TiO₂ nanowires and gives better memristive behavior with larger switching loops when positive voltage was applied to the sample.

• Periodical: Applied Mechanics and Materials (Volume 393)
• Pages: 63-67
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.393.63
• Online since: September 2013
• Authors: Nur Syahirah Kamarozaman, Mohd Nor Asiah, Z. Aznilinda, Raudah Abu Bakar, Sukreen Hana Herman, M. Rusop
• Keywords: Immersion Method, Memristive Behavior, RF Magnetron Sputtering Method, TiO₂ Nanostructures, TiO₂ Thin Film

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