Effect of Electrode Types on the Resistive Switching Behavior of Titania Thin Films

Abstract:

The resistive switching or memristive behavior of sputtered titania thin films sandwiched in between of three types of metal electrodes (Au, Pt and Ti) was investigated. The active region of the device consisted of two titania thin films, in which, the first layer was exposed to a plasma treatment to create the oxygen vacancies, before the deposition of the second layer. The whole active layer sputtering deposition process was conducted in a one-flow process without exposing the sample to the room ambient. From the I-V measurements, titania thin films in between Ti and Au did not show any resistive switching, but those sandwiched between Pt electrodes exhibit a noticeable memristive behavior. This may due to the metal work function of the platinum itself.

• Periodical: Applied Mechanics and Materials (Volume 393)
• Pages: 74-78
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.393.74
• Online since: September 2013
• Authors: Zainuddin Aznilinda, Sukreen Hana Herman, Raudah Abu Bakar, M. Rusop
• Keywords: Memristive Behavior, Metal Electrode, Metal Work Function, RF Magnetron Sputtering, Titania

References

[1] L. Chua, S. Kang, Memristive devices and systems, Proc IEEE, 64 (1976) 209-223.

[2] D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams , The missing memristor found, Nature, 453 (2008) 80-83.

DOI: 10.1038/nature06932

[3] K. -H. Kim, S. Gaba, D. Wheeler, J.M. Cruz-Albrecht, T. Hussain, N. Srinivasa, W. Lu, A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications, Nano Letters, 12 (2011) 389-395.

DOI: 10.1021/nl203687n

[4] N. Gergel-Hackett, J.L. Tedesco, C.A. Richter, Memristors With Flexible Electronic Applications, Proceedings of the IEEE, PP (2011) 1-8.

[5] S. Won, S. Go, K. Lee, J. Lee, Resistive switching properties of Pt/TiO2/n+-Si ReRAM for nonvolatile memory application, Electronic Materials Letters, 5 (2009) 29-33.

[6] N.M. Muhammad, N. Duraisamy, K. Rahman, H.W. Dang, J. Jo, K.H. Choi, Fabrication of printed memory device having zinc-oxide active nano-layer and investigation of resistive switching, Current Applied Physics, 13 (2013) 90-96.

DOI: 10.1016/j.cap.2012.06.017

[7] K. Miller, K.S. Nalwa, A. Bergerud, N.M. Neihart, S. Chaudhary, Memristive Behavior in Thin Anodic Titania, Electron Device Letters, IEEE, 31 (2010) 737-739.

DOI: 10.1109/led.2010.2049092

[8] M.N. Awais, N.M. Muhammad, D. Navaneethan, H.C. Kim, J. Jo, K.H. Choi, Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor), Microelectronic Engineering, 103 (2013) 167-172.

DOI: 10.1016/j.mee.2012.09.005

[9] S. Carrara, D. Sacchetto, M. -A. Doucey, C. Baj-Rossi, G. De Micheli, Y. Leblebici, Memristive-biosensors: A new detection method by using nanofabricated memristors, Sensors and Actuators B: Chemical, 171–172 (2012) 449-457.

DOI: 10.1016/j.snb.2012.04.089

[10] Z. Aznilinda , S.H. Herman, M. Rusop , Effect of Plasma Treatment on Memristive Behavior of Sputtered Titania, Presented at the 7th NANOSMAT Conference, International Conference on Surfaces, Coatings and Nanostructured Materials, Prague , Czech Republic on 19th September (2012).

[11] Z. Aznilinda, S.H. Herman, M. Rusop, Physical characteristic of room-temperature deposited TiO2 thin films by RF magnetron sputtering at different RF power, Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on2012, pp.685-689.

DOI: 10.1109/shuser.2012.6268904

[12] T. -G. Woo, I. -S. Park, K. -H. Jung, W. -Y. Jeon, Y. -K. Hwang, K. -W. Seol, Effects of plasma treatment on the peel strength of Ni on polyimide, Electronic Materials Letters, 8 (2012) 151-156.

DOI: 10.1007/s13391-012-1075-5

[13] G.V. Strukov, V.S. Stolyarov, G.K. Strukova, V.N. Zverev, Physica C: The superconducting properties of nanostructured Pb7Bi3 films obtained by pulse electroplating, Superconductivity, 483 (2012) 162-164.

DOI: 10.1016/j.physc.2012.09.002

[14] R. Williams, How We Found The Missing Memristor, Spectrum, IEEE, 45 (2008) 28-35.

DOI: 10.1109/mspec.2008.4687366

[15] F. Zhuge, B. Hu, C. He, X. Zhou, Z. Liu, R. -W. Li, Mechanism of nonvolatile resistive switching in graphene oxide thin films, Carbon, 49 (2011) 3796-3802.

DOI: 10.1016/j.carbon.2011.04.071

[16] H. Akinaga, H. Shima, Resistive Random Access Memory (ReRAM) Based on Metal Oxides, Proceedings of the IEEE, 98 (2010) 2237-2251.

DOI: 10.1109/jproc.2010.2070830

[17] F. Hernandez-Ramirez, S. Barth, A. Tarancon, O. Casals, E. Pellicer, J. Rodriguez, A. Romano-Rodriguez, J.R. Morante, S. Mathur, Water vapor detection with individual tin oxide nanowires, Nanotechnology, 18 (2007) 424016.

DOI: 10.1088/0957-4484/18/42/424016

[18] S.V.J. Chandra, E. Fortunato, R. Martins, C. -J. Choi, Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices, Thin Solid Films, 520 (2012) 4556-4558.

DOI: 10.1016/j.tsf.2011.10.137

[19] M. Chen, X. Xia, Z. Wang, Y. Li, J. Li, C. Gu, Rectifying behavior of individual SnO2 nanowire by different metal electrode contacts, Microelectronic Engineering, 85 (2008) 1379-1381.

DOI: 10.1016/j.mee.2008.01.027