Design and Thermal Analysis of SiGe HBT with Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

Abstract:

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

• Periodical: Applied Mechanics and Materials (Volumes 462-463)
• Pages: 592-596
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.462-463.592
• Online since: November 2013
• Authors: Liang Chen*, Cheng Zhong Hu, Chun Ling Jiang
• Keywords: SiGe Heterojunction Bipolar Transistor, Thermal Resistance, Thermal Stability

References

[1] Erion Gjonaj, Robert Oestreich, and Thomas Weiland, IEEE Trans. Magn, vol. 39, p.1211–1214, July (2003).

[2] S. P. McAlister, W. R. McKinnon, S. J. Kovacic, and H. Lafontaine, Solid-State Electronics, vol. 48, issues. 10-11, pp.2001-2006, October-November (2004).

DOI: 10.1016/j.sse.2004.05.047

[3] Andrea Pacelli, Pierpaolo Palestri, and Marco Mastrapasqua, IEEE Trans. Electron Devices, vol. 49, no. 6, pp.1027-1033, June (2002).

DOI: 10.1109/ted.2002.1003724

[4] T. Vanhoucke and G. A. M. Hurkx, IEEE Trans. Electron Devices, vol. 53, no. 6, pp.1379-1388, June (2006).

[5] Wang Y, Zhang WR, Xie HY, and Zhang W, He LJ, Sha YP, IEEE Proceedings of 2007 International Conference on Microwave and Millimeter Wave Technology, ICMMT '07. p.1–4.

[6] Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, and Chi-Chung Liu, Microelectronics Reliability, vol. 43, pp.421-426, (2003).

DOI: 10.1109/hkedm.2002.1029165

[7] W. Liu, B. Bayraktaroglu, Solid-State Electronics, vol. 36, no. 2, pp.125-132, June. (1993).

[8] Willian Liu, Ali Khatibzadeh, and Jim Sweder, IEEE Trans. Electron Devices, vol. 43, no. 2, pp.245-251, June (1996).

[9] J. -S. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, and S. Subbanna, IEEE BCTM, pp.100-103, (2002).

[10] Jae-Sung Rieh, David Greenberg, Qizhi Liu, Alvin J. Joseph, Greg Freeman, and David C. Ahlgren, IEEE Trans. Electron Devices, vol. 52, no. 12, pp.2744-2752, December (2005).

DOI: 10.1109/ted.2005.859652

[11] Chen L, Zhang W R, Jin D Y, et al. 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT2010), Chengdu, p.664~666, (2010).

[12] Chen L, Zhang W R, Jin D Y, et al. The Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology( ICSICT 2010), ShangHai, p.1668~1670, (2010).

[13] Paul F. Combes, Jacques Graffeuil, Jean-Francois Sautereau. John Wiley & Sons, p.106, (1987).