Synthesis and Electrical Applications of ZnS0.59Se0.41 Nanowires

Xing Zhi Zhao; Hong Wei Song; Xu Ma; Xiang An Wang

doi:10.4028/www.scientific.net/AMM.487.25

Paper Titles

Snoek-Type Anelastic Relaxation in a Water-Quenched Ti-Nb Alloy
p.3

Construction of Johnson-Cook Model for Gr2 Titanium through Adiabatic Heating Calculation
p.7

High Temperature Oxidation Behaviors of CNTs/MoSi₂ Composites
p.15

Study on Effects of the Nano Reinforcing Material on the Mechanical Properties of Self-Healing Composites
p.20

Synthesis and Electrical Applications of ZnS_0.59Se_0.41Nanowires
p.25

Ba_xSr_1-x TiO₃ Different Thickness Analysis Using Sol Gel Approach
p.29

CuDia Slug Size Variation Analysis on Heat Dissipation of High Power LED
p.33

Analysis on Surface Roughness and Surface Reflectance through DOE
p.37

Study on Pitting Corrosion Resistance of Nanocrystallized Bulk 304 Stainless Steel in 0.5mol/L Hydrochloric Acid Solution
p.41

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 487Synthesis and Electrical Applications of...

Synthesis and Electrical Applications of ZnS_0.59Se_0.41Nanowires

Abstract:

ZnS_0.59Se_0.41 alloy nanowires were prepared on gold-coated Si substrates by the thermalevaporation of a mixture of ZnSe and ZnS powders. Field-effect transistors (FETs) constructed fromthe ZnS_0.59Se_0.41 NWs verified their p-type nature with a hole concentration of 3.1×10¹⁸ cm^-3.Inaddition,the photoresponse indicates their potential for photoelectric applications.

You might also be interested in these eBooks

Mechanical Structures and Smart Materials

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 487)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.487.25

Citation:

Cite this paper

Online since:

January 2014

Authors:

Xing Zhi Zhao*, Hong Wei Song, Xu Ma, Xiang An Wang

Keywords:

Nanowire, Photodetector, P-Type ZnS_xSe_1-x

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Xiwei Zhang, Jiansheng Jie, Zhi Wang, et al. Surface induced negative photoconductivity in p-type ZnSe: Bi Nanowires and its nano-optoelectronic applications, J. J. Mater. Chem. 21(2011) 6736-6741.

DOI: 10.1039/c1jm00035g

Google Scholar

[2] Wei Yan, Chenguo Hu, Yi Xi, et al. ZnSe nanorods prepared in hydroxide-melts and theirapplication as a humidity sensor, J. Maerials Research Bulletin. 44(2009)1205-1208.

DOI: 10.1016/j.materresbull.2009.01.012

Google Scholar

[3] Qiang Peng, Jiansheng Jie, Chao Xie, et al. Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity,J. Appl. Phys. Lett. 98(2011)117-123.

DOI: 10.1063/1.3569590

Google Scholar

[4] Jiansheng Jie, Wenjun Zhang, Lgor Bello, et al. One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications,J. Nanotoday. 5(2010)313-316.

DOI: 10.1016/j.nantod.2010.06.009

Google Scholar

[5] Di Wu, Yang Jiang, Yugang Zhang, et al. Device structure-dependentfield-effect and photoresponse performances of p-type ZnTe: Sb nanoribbons,J.J. Mater. Chem. 22(2012) 6206-6212.

Google Scholar

[6] Peng Jiang, Jiansheng Jie, Yongqiang Yu, et al. Aluminium-doped n-type ZnS nanowires ashigh-performance U V and humidity sensors,J. J. Mater. Chem. 22(2012) 6856-6861.

DOI: 10.1039/c2jm15365c

Google Scholar