Research on Sensitive Ports under the Action of Different ESD Initial Injected Voltage of Typical High-Frequency Low-Noise Silicon Bipolar Transistors

Kang Ning Dong; Xi Jun Zhang; Jie Yang

doi:10.4028/www.scientific.net/AMM.513-517.4563

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517Research on Sensitive Ports under the Action of...

Research on Sensitive Ports under the Action of Different ESD Initial Injected Voltage of Typical High-Frequency Low-Noise Silicon Bipolar Transistors

Abstract:

In order to find the influence of ESD initial injected voltage on sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on 9014 and 2SA812, which are beneficial to study the relevant law of ESDS (ESD sensitivity). The results show that the reverse-biased collector-base junction of 9014 and 2SA812 satisfied the law of latent damage. Besides, the ESD initial injected voltage is inversely proportional to the number of ESD before the device out of work, and proportional to the failure voltage.

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Periodical:

Applied Mechanics and Materials (Volumes 513-517)

Pages:

4563-4566

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.513-517.4563

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Online since:

February 2014

Authors:

Kang Ning Dong*, Xi Jun Zhang, Jie Yang

Keywords:

Bipolar Transistor, ESD, Failure Voltage, Initial Injected Voltage, Number of ESD, Sensitive Ports

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