A Low Power SiGe-BiCMOS LNA for COMPASS Applications

Bing Liang Yu; Jin Li; Wen Yuan Li

doi:10.4028/www.scientific.net/AMM.513-517.4580

Paper Titles

Research on Sensitive Ports under the Action of Different ESD Initial Injected Voltage of Typical High-Frequency Low-Noise Silicon Bipolar Transistors
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Research on Indirect Charging Radio Frequency Explosive Magnetic Flux Compression Generator
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A 8GHz Differential Comparator for Ultra High Speed ADC in 90nm CMOS Technology
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Design of a Low Power Multi-Channel 10Bit SAR ADC
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A Low Power SiGe-BiCMOS LNA for COMPASS Applications
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A 6-Bit 5GS/s Pseudo-Thermometer Segmented CMOS DAC
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A Temperature Compensation Circuit within Constant Current Charging Cycle
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517A Low Power SiGe-BiCMOS LNA for COMPASS...

A Low Power SiGe-BiCMOS LNA for COMPASS Applications

Abstract:

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.

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Periodical:

Applied Mechanics and Materials (Volumes 513-517)

Pages:

4580-4584

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.513-517.4580

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Online since:

February 2014

Authors:

Bing Liang Yu*, Jin Li, Wen Yuan Li

Keywords:

Inductively Degenerated, Resistive Feedback, SiGe-BiCMOS LNA

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