A Study on the Resistive Switching of La0.7Sr0.3MnO3 Film Using Spectromicroscopy

Hong Sub Lee; Kyung Mun Kang; Woo Je Han; Tae Won Lee; Chang Sun Park; Yong June Choi; Hyung Ho Park

doi:10.4028/www.scientific.net/AMM.597.184

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A Study on the Resistive Switching of La_0.7Sr_0.3MnO₃ Film Using Spectromicroscopy
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 597A Study on the Resistive Switching of...

A Study on the Resistive Switching of La_0.7Sr_0.3MnO₃ Film Using Spectromicroscopy

Abstract:

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La_0.7Sr_0.3.MnO₃ (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

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Applied Mechanics and Materials (Volume 597)

Pages:

184-187

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.597.184

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Online since:

July 2014

Authors:

Hong Sub Lee, Kyung Mun Kang, Woo Je Han, Tae Won Lee, Chang Sun Park, Yong June Choi, Hyung Ho Park*

Keywords:

LSMO, Perovskite Manganite, ReRAM, Resistive Switching

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References

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