Structural Dependences of Gunn Oscillations in a Planar Nano-Device

Abstract:

Gunn oscillations in a GaAs-based planar nanodevice are studied using a two-dimensional ensemble Monte Carlo (EMC) method. Current oscillations with a frequency of about 0.1 THz have been observed. The current oscillations are accompanied by electron domain evolution along the nanochannel. As such, they can be attributed to Gunn Effect. Further study shows that the Gunn oscillations are not only bias-dependent, but also structural-dependent. The threshold voltage and the amplitude of the oscillations are both related to the channel width and the asymmetry of the device structure.

• Periodical: Applied Mechanics and Materials (Volume 618)
• Pages: 39-42
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.618.39
• Online since: August 2014
• Authors: Kun Yuan Xu, Ya Nan Wang, Zuo Nian Wang
• Keywords: Gunn Oscillation, Monte Carlo, Nanodevice, Planar

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